| PART |
Description |
Maker |
| 126264 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 134144 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115180 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4591 SFH4592 Q62702-P5059 Q62702-P5060 SIEMENSA |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http://
Bright LED Electronics Corp.
|
| PDI-E813 |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E940SM |
GaAlAs High power IR LED Emitters
|
API Delevan
|
| PDI-E940 |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E825 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
